Contract analysis

I. Executive Summary This memorandum summarizes the findings of the environmental and manufacturing compliance due diligence conducted by Calderwood & Harkness LLP ("C&H") in connection with the prospective initial public offering in the United States of Halcyon Semiconductor Aktiengesellschaft ("Halcyon" or the "Company") via a Level III American Depositary Receipt program. The offering is expected to be effected th

II. Overview of Halcyon's Manufacturing Footprint A. Munich Headquarters and Original Fabrication Facility (Fab 1) Halcyon's global headquarters are located at Maximilianstraße 72, 80539 Munich, Germany, where the Company maintains its principal executive offices, investor relations, and corporate administrative functions. Separately, the Company operates its original semiconductor fabrication facility, designated "F

III. Regulatory Framework The following section summarizes the principal environmental regulatory frameworks applicable to Halcyon's manufacturing operations. Given the multi-jurisdictional nature of the Company's operations and the significance of both German and EU-level regulation, a thorough understanding of this framework is essential to evaluating the Company's compliance posture and the associated disclosure o

IV. Environmental Permits and Compliance Status A. Munich / Fab 1 BImSchG Operating Permit. Fab 1 holds a valid BImSchG operating permit originally issued by the Government of Upper Bavaria (Regierung von Oberbayern) on March 14, 2000, following the facility's initial commissioning in the late 1990s. The permit has been amended on six occasions, most recently on September 22, 2021, in connection with the cleanroom mo

V. Hazardous Materials Handling — Detailed Analysis A. Categories of Hazardous Materials Used in Semiconductor Fabrication Semiconductor fabrication, and particularly SiC and GaN power device fabrication, involves the use of a broad range of hazardous materials. The following categories of hazardous materials are used at Halcyon's fabrication facilities (Fab 1, Fab 2, and, upon commissioning, Fab 3): Process Gases. H